First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors
DOI:
https://doi.org/10.66000/3110-9772.2026.02.04Keywords:
DFT, VASР, Cu2NiXY4, mBJ+U, kesterite, electronic structure, band gap, Mn placementAbstract
In this work, the effect of partial substitution of Mn by Ni on the structural and electronic properties of kesterite systems Cu2NiXY4 (X = Sn, Ge, Si; Y = S, Se) was studied using density functional theory (DFT). The mBJ+U method was used to characterize the bandgap more accurately. To the best of our knowledge, a systematic comparative study of Mn substitution in the entire Cu2NiXY4 (X = Sn, Ge, Si; Y = S, Se) family has not been previously performed. Due to crystallographic constraints of the kesterite unit cell, the substitution of a single Ni atom with Mn corresponds to 50%. This configuration was chosen to study the effect of Mn substitution on the structural and electronic properties of Cu2NiXY4 (X = Sn, Ge, Si; Y = S, Se) compounds, whereas the study of lower concentrations requires the use of a supercell and is the subject of further research. The calculation results show that the partial substitution of Ni with Mn preserves the tetragonal structure of kesterite and significantly alters the electronic structure. In all the compounds studied, the bandgap decreases from 1.028–3.397 to 1.007–3.333 eV. For example, in the Cu2NiSnS4 system, the bandgap width decreases from 1.59 eV to 1.49 eV. The narrowing of the bandgap results from hybridization between the Mn-3d, Cu-3d, and S/Se-p orbitals near the band edges, leading to a redistribution of electronic states around the Fermi level. The results demonstrate that Mn substitution is an effective strategy for controlling the electronic properties of Cu2NiXY4 kesterites, offering great promise for use in optoelectronic devices where adjustable bandgaps are required.
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Copyright (c) 2026 I.M. Raufzoda, D.D. Nematov, A.S. Burhonzoda (Author)
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